Abstract
The finite element method and effective mass approximation are used to investigate the simultaneous effects of SOI, electric and magnetic fields and quantum geometry on the energy and wave function of a cylindrical quantum well wire. Calculations are performed for a typical GaAs/AlxGa1−xAs cylindrical quantum well wire. It is found that SOI, external fields and layers thickness have considerable effects on the energy eigenvalues and functions of the system. Moreover it is shown that the tunneling effect and energy level anti-crossing depend on the SOI and external factors. We have proposed the SOI strength as an agent to control the tunneling effect in typical nanostructures.
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