Abstract
We report a study on terahertz lasing from optically excited Bi donors in axially compressed silicon crystal. The laser frequency and the radiated power were measured versus stress applied along the [100] crystal axis. As shown, Bi donors lase at the optical transitions from the 2p± states to the 1s (E) state or/and to the spin-orbit split 1s (T2:Γ8) and 1s (T2:Γ7) states, and by fitting the crystal strain, one can shift the laser transitions and change the output power. The experiment is explained by the dependence of spin-orbit splitting and phonon-assisted relaxation of donor states on crystal distortion.
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