Abstract

We propose and demonstrate a reconfigurable logic gate based on a single spin-orbit torque magnetic tunnel junction (SOT-MTJ) device operated by unipolar voltage inputs. The SOT-MTJ used in the logic can be switched between high and low resistance state when large and small amplitude voltage pulses inject to it. Based on this magnetic switching characteristic, the logic gates of XOR, XNOR and NOT are designed and realized by different amplitude of voltage with the same sign. Compared with spin logics with bipolar current signals as logic inputs, our logic implementation uses much less transistors and significantly simplifies the circuit complexity, which is advantageous for logic-in-memory from the perspective of energy and area efficiency.

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