Abstract
We present the first findings of the spin transistor effect in the Rashba gate‐controlled ring embedded in the p‐type self‐assembled silicon quantum well that is prepared on the n‐type Si (100) surface. Firstly, the amplitude and phase sensitivity of the “0.7⋅(2 e2/h)” feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double‐slit ring are found to result from the Aharonov‐Bohm (AB) and Aharonov‐Casher (AC) conductance oscillations by varying respectively the value of the external magnetic field and the top‐gate bias voltage. Secondly, the “0.7⋅(2 e2/h)” feature appears to exhibit the fractional form revealed by both the plateuas and steps as a function of the top‐gate bias voltage, with the variations of their positions in the external magnetic field.
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