Spin Interference In Silicon One-Dimensional Rings

Abstract

We present the first findings of the spin transistor effect in the Rashba gate‐controlled ring embedded in the p‐type self‐assembled silicon quantum well that is prepared on the n‐type Si (100) surface. The coherence and phase sensitivity of the spin‐dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double‐slit ring and revealed by the Aharonov‐Bohm (AB) and Aharonov‐Casher (AC) conductance oscillations, respectively. Firstly, the amplitude and phase sensitivity of the “0.7⋅(2e2/h)” feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double‐slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin‐orbit interaction (SOI). Secondly, the values of the AC oscillations caused by the Rashba SOI are found to take in the fractional form with both the plateuas and steps as a function of the bias voltage.