Spin-filter device using the Zeeman effect with realistic channel and structure parameters

Abstract

We have theoretically calculated the performance of a Zeeman-type spin polarizer, which consists of ferromagnetic (FM) and metal–insulator–semiconductor (MIS) gate nanostructures on top of an InAs two-dimensional electron gas (2DEG) channel. For the calculations, we have taken a realistic electron concentration, electron effective mass and the effective g-factor of the InAs 2DEG into account. In addition, we have assumed realistic FM and MIS structure sizes by conventional electron beam lithography. In the calculations, we have demonstrated clear oscillation of spin polarization over ±85%. Furthermore, we have shown that it works not only as a spin-polarized current generator but also a detector. In addition, we have proposed a novel spin-filter device utilizing the Zeeman-type spin polarizers. We have found that its conductance characterization allows us to evaluate the operation of Zeeman-type spin polarizers. We expect the Zeeman-type spin polarizers and spin-filter devices to open up a new field of spintronics.