Abstract
We report optical studies in undoped GaAsN epilayers and InGaAsN quantum wells, which show that a strong electron spin polarization can persist at room temperature. This is a direct consequence of the long spin relaxation time of electrons in dilute nitride materials. Introducing less than 1% of nitrogen in the binary (GaAs) or ternary (InGaAs) alloy increases the electron spin relaxation time at T=300K by a factor greater than 20 in as-grown material before annealing. A drastic drop in the electron spin relaxation time is observed for annealed samples.
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