Abstract
Two terminal devices have traditionally provided band-structure based high frequency operation. Third terminal control often involves hybrid design approaches. The presence of diluted magnetic semiconductor layers in device fabrication should permit the magnetic field to function as a pseudothird terminal. This is discussed for single barrier, double barrier and superlattice structures, where control is demonstrated. The limits of high frequency operation are discussed in general terms with application to barrier devices and superlattices containing DMS layers.
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