Spin-dependent tunneling time in strained graphene

Abstract

We investigate spin-dependent tunneling time, dwell and group delay time, through monolayer graphene barrier with Rashba spin–orbit interaction in the presence of zigzag and armchair direction strain. It is found that the oscillation amplitude of the dwell time increases by increasing the strain strength. In addition, for the zigzag direction strain the Hartman effect can be observed for the both spin-up and spin-down electrons. When the armchair direction strain is applied to a monolayer graphene the spin polarization increases with increasing the strain strength, whereas for the zigzag direction strain it is zero. In this case, unlike the zigzag direction strain dwell time for the normal incident angle depends on the spin state of electron.