Abstract
Spin-dependent tunnel junctions with crystalline ZrOx barriers were fabricated, with tunnel magnetoresistance (TMR) reaching 20% and a resistance×area product of 24 k Ω μm2, after annealing at 260 °C. Effective barrier height and thickness are 1.6 eV and 10.6 Å, respectively. The ZrOx barriers were fabricated by rf plasma oxidation of a 5 Å thick Zr layer. High-resolution transmission electron microscopy and Rutherford backscattering spectrometry were used to characterize the as-deposited barrier. Both ZrO and ZrO2 phases are present, together with (CoFe)Ox. Upon annealing, the interfacial oxygen moves into the barrier, resulting in an increase of TMR from 2% to 19.2%, an increase of barrier height from 0.3 to 1.6 eV, and a reduction of barrier thickness from 18.5 to 10.5 Å.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
