Abstract
Abstract The dependence of the transition from the strong-coupling regime to the weak-coupling regime on the polariton spin orientation in a InGaAs semiconductor microcavity is experimental studied by means of time-resolved photoluminescence. Polaritons are created by non-resonant circularly-polarized optical excitation and the power intensity that breaks the strong coupling is found to be much lower for co-polarized polaritons than that for cross-polarized polaritons. Coulomb screening effects alone cannot explain the stronger loss of oscillator strength for majority excitons (co-polarized) and spin-dependent mechanisms are required to justify such behaviour.
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