Abstract
Spin-current injection into an organic semiconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the κ-(BEDT-TTF)2Cu[N(CN)2]Br film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in κ-(BEDT-TTF)2Cu[N(CN)2]Br. We found that the voltage signal in the κ-(BEDT-TTF)2Cu[N(CN)2]Br/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.
Highlights
Spin-current injection into an organic semiconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br film induced by the spin pumping from an yttrium iron garnet (YIG) film
When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the κ-(BEDT-TTF)2Cu[N(CN)2]Br film
We found that the voltage signal in the κ-(BEDT-TTF)2Cu[N(CN)2]Br/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions
Summary
Spin-current injection into an organic semiconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br film induced by the spin pumping from an yttrium iron garnet (YIG) film. To observe the ISHE in κ-Br induced by the spin pumping, we measured the H dependence of the microwave absorption and DC electric voltage between the electrodes at various temperatures with applying a static magnetic field H and a microwave magnetic field with the frequency of 5 GHz to the device.
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