Abstract
The work herein describes a method that allows one to measure paramagnetic defect densities in semiconductor and insulator based devices with electrically detected magnetic resonance (EDMR). The method is based upon the mixing of defect states which results from the dipolar coupling of paramagnetic sites at low magnetic fields. We demonstrate the measurement method with spin dependent tunneling in thin film dielectrics; however, the method should be equally applicable to paramagnetic defect density measurements in semiconductors via the more commonly utilized EDMR technique called spin dependent recombination.
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