Abstract
Abstract Electrically detected magnetic resonance (EDMR) of phosphorus in silicon was detected in weak magnetic fields at low resonance frequencies of 200–400 MHz before and after irradiation of samples by γ-rays. EDMR spectra were detected by measuring dc-photoconductivity of samples under band-gap illumination. Phosphorus (P0) EDMR lines are accompanied always with the single line (S-line) with g-factor ≈2.01 originated most likely from the surface recombination centers. Strong, about 10 times, increase of the P0 and S signals was found in the same samples after irradiation with the doses of (3−6)×1015 γ/cm−2. For these doses of irradiation we were also able to see the ESR transition between entangled states of phosphorous formed at low magnetic field. This shows the higher efficiency of spin dependent recombination (SDR) process in irradiated samples. In addition, several new EDMR lines emerged after irradiation. Some of them arose from the spin dependent recombination through the photoexcited triplet states of A-centers (oxygen+vacancy complex).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
