Abstract
We suggest and verify experimentally a concept of heteromagnetic semiconductor structures. It is based on spin diffusion between layers of the nanostructure with different magnetic properties and allows to control the spin-switching rate for magnetic ions. A ten times increase of spin-lattice relaxation rate of magnetic Mn ions is achieved in Zn1−xMnxSe∕Be1−yMnyTe heteromagnetic structures with an inhomogeneous distribution of Mn ions.
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