Abstract
New peroxopolyacids based on tungsten and niobium (Nb‐HPA) were synthesized and investigated as negative inorganic resist materials for microlithography. Amorphous and microstructure‐free thin films, obtained from their water‐based solution using a conventional spin‐coating technique, exhibited sensitivity to deep UV (, Xe‐Hg lamp), E‐beam (10 μC/cm2, 30 kV) and x‐ray (120 mJ/cm2, Mo L). The resistivity of Nb‐HPA film was found to be 50 times greater than that of polyimide resin (PIQ resin). Patterns as fine as 0.2 μm with an aspect ratio of 7.5 were successfully fabricated through the E‐beam bilayer process in which the bottom layer was PIQ (1.5 μm thickness) and the top, Nb‐HPA (0.1 μm).
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