Abstract
A spike-timing-dependent plasticity (STDP) device with a Ga-Sn-O (GTO) conductance change layer deposited by a mist-CVD method has been developed. First, the memristive characteristic is analyzed. Next, based on it, spike waveforms are determined. Finally, the STDP characteristic is successfully confirmed. This is an original report on the realization of an STDP characteristic using a thin film deposited by the mist-CVD method, which is achieved by the GTO properties and a well-designed clear methodology to realize a STDP characteristic from a memristive characteristic.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call