Abstract
In this article, the nonlinear optical rectification (NOR) of GaAs/Ga1−xAlxAs quantum dots (QDs) in the presence of the external tuning elements, such as Al-concentration and temperature in the Deng–Fan–Eckart (DFE) potential has been studied. The bound-state solutions of the radial Schrödinger equation can be obtained using the Factorization method. The density matrix theory and iterative method are used to calculate the analytical expression of the NOR coefficient. The obtained results can indicate that these tuning elements and structural parameters, such as Al-concentration, the depth and the strengths of DFE potential can affect the location and peak of formant in this system. Thus, the external tuning elements and structural parameters strongly affect the NOR properties of the GaAs/Ga1−xAlxAs QDs.
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