Tailoring nonlinear optical rectification coefficient of impurity doped quantum dots by invoking Gaussian white noise

Abstract

We make a rigorous exploration of profiles of nonlinear optical rectification (NOR) coefficient of impurity doped quantum dots (QDs) in presence and absence of noise. We have exploited Gaussian white noise in the present study. The quantum dot is doped with Gaussian impurity. Noise has been introduced to the system additively and multiplicatively. A perpendicular magnetic field serves as a confinement source and a static external electric field has been applied. The NOR profiles have been monitored as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength assume different values. In addition, the role of mode of application of noise (additive/multiplicative) on the NOR profiles has also been examined thoroughly. The NOR profiles are found to be endowed with interesting observations such as shift of peak position and maximization/minimization of peak intensity. However, presence of noise prominently alters the features of NOR profiles through some interesting manifestations and often induces one photon resonance enhancement. Furthermore, the mode of application of noise (additive/multiplicative) also controls the NOR profiles in disparate as well as often contrasting manners. The observations indicate possibilities of tailoring the NOR coefficient of doped QD systems in presence of noise which bears tremendous technological importance.