Abstract
The evolution of stress/strain fields during spherical nano-indentation of a Si hard film/Al soft substrate layered system was investigated numerically. Observation of the stress and strain fields for a small indenter radius suggested that critical indentation depths could be correlated with elastic stress field interaction with the substrate (for 2% load-error-tolerable limit) or plastic deformation in the substrate (for 10% load-error-tolerable limit). The stress field interaction with the substrate or plastic deformation of the substrate provided an earlier indication of error than the load–displacement curves when the indenter radius was small. However, when the indenter radius was large, the latter was more sensitive to errors during the indentation process. Evolution of strain fields beyond the critical indentation limit was also investigated and is discussed.
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More From: Modelling and Simulation in Materials Science and Engineering
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