Abstract
We have experimentally investigated the possibility of increased electron reflectivity induced by an insulating NiO layer that is used to exchange bias a metallic spin-valve. For this purpose Ni/sub 80/Fe/sub 20//Cu/Ni/sub 80/Fe/sub 20/ and Ni/sub 66/Fe/sub 16/Co/sub 18//Cu/Co/sub 90/Fe/sub 10/ spin-valves were grown and subsequently covered by insulating NiO or by metallic FeMn. In all cases the giant magnetoresistance of the NiO spin-valves is systematically larger upon a variation of the exchange-biased ferromagnetic layer thickness, also after correcting the data for the conductivity of FeMn which we have determined from a separately grown series of samples with variable FeMn thickness. The increased giant magnetoresistance ratios can be qualitatively understood on the basis of a semiclassical calculation in which (partial) specular reflectivity at the NiO interface has been included.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
