Abstract
NiO/CoFeB/Cu/CoFeB spin valves with B content of 0 to 10 at.% were prepared to investigate the dependence of the giant magnetoresistance(GMR) effect on the thickness of free magnetic layers. In the spin valves, GMR effects were observed even when the free magnetic layers were very thin, 1 or even 0.5 nm. For lower B content, the magnetoresistance (MR) ratio rapidly increased with the increase of free magnetic layer thickness, while for higher B content, the MR ratio was maximum at the thickness roughly equal to the mean free path of electrons in the magnetic layers. By using the Camley-Barnas model, the value of the MR ratio and the resistivity can be consistently explained if the specular reflection of electrons is considered at the interface between magnetic and nonmagnetic layers.
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