Abstract
In this investigation we apply the x-ray reflectivity and diffuse scattering measurements to study the interface and surface morphology and bulk properties of SiO2 amorphous films grown on Si substrates. Three samples with different interface and surface roughnesses are analysed. Simultaneous fitting of both specular reflectivity and diffuse scattering curves allows the determination of precise values of surface and interface roughness, film thickness and bulk density of silicon dioxide films. The distorted-wave Born approximation is used for quantitative characterization of diffuse scattering from the samples. The structural parameters obtained by the x-ray method agree with atomic force microscopy results.
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