Spectroscopy of silicon dioxide films grown under negative corona stress

Abstract

Silicon dioxide films were grown in oxygen ambient under negative corona stress at low temperatures (400–450 °C). Fourier transform infrared spectra of these films show a peak at 935 cm−1 along with the conventional transverse optic mode peaks around 1074, 800, and 456 cm−1. A broad shoulder at 1150 cm−1 was also observed. The extra peak is attributed to the presence of SiO42− ions and could be the outcome of incomplete oxidation at the surface. The films indicated properties similar to a fully relaxed thermally grown silicon dioxide film with a contradictory nature. The results of these experiments can be comprehensively explained only by assuming the presence of some mixed phase of SiO2.