Abstract
An influence of power laser pulses of subthreshold intensity with hν < Eg on the defect structure, surface states and optical properties has been studied in high-resistivity, undoped, cubic ZnSe single crystals with different degrees of purity. The laser-stimulated modification of the spectra of photoconductivity, photoluminescence, Raman scattering and optical absorption was due to laser-induced formation of intrinsic point defects of structure in the bulk as well as, particularly, in the surface layer of irradiated samples. The role of laser-induced point defects in the revealed phenomenon of the laser photosensitization of ZnSe single crystals has been analyzed and the method for nondestructive determination of the ray-resistance threshold of ZnSe-based optical components has been discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
