Abstract
We have grown Er 3+- and Er 3+-, Yb 3+-doped scandium silicates Sc 2SiO 5 and Sc 2Si 2O 7 by the Czochralski technique and analyzed the spectroscopic properties of these crystals. Crystal data of the host materials, the lifetimes and the Stark level splitting of the Er energy levels as well as laser parameters of samples pumped by a Ti:Al 2O 3-laser and InGaAs-laser diodes are presented. Laser oscillation of diode pumped Er,Yb:Sc 2SiO 5 yielded a slope efficiency of 2.4% and a maximum output power of 24 mW.
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