Energy level splitting in doped nonabrupt [formula omitted] double quantum well

Abstract

The electron energy levels of doped nonabrupt GaAs Al x Ga 1−x As double quantum wells are calculated. It is shown that their characteristic splitting is reduced considerably when interface widths of only two GaAs lattice units are considered. The nonabrupt interfaces shift the energy levels toward high energies. The energy level shift and splitting are sensitive to the level of doping.