Abstract
The physical methods used to analyse the residual impurities in non-doped float-zoned silicon are presented with an emphasis on low-temperature spectroscopy. Photoluminescence and absorption spectra of residual impurities in high-purity materials illustrate the possibilities of spectroscopic techniques. The hydrostatic expansion of the Si lattice due to a high concentration of interstitial O (Oi) can be probed by the stress-induced shift of C-related lines relative to the position in Oi-lean material. Values of the volume change near the P and As atoms, which are residual impurities in Si, can be obtained from the electronic spectra; the method used is outlined and the results compared with theoretical calculations.
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