Abstract
Epitaxial (111) MgO films were prepared on (0001) AlxGa1−xN via molecular-beam epitaxy for x = 0 to x = 0.67. Valence band offsets of MgO to AlxGa1−xN were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and 1.05 ± 0.09 eV for x = 0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x = 0, 0.28, and 0.67, respectively. All band offsets measured between MgO and AlxGa1−xN provide a > 1 eV barrier height to the semiconductor.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
