Abstract
We performed spectroscopic ellipsometry (SE) measurements to investigate the possibility of a nondestructive in-situ monitoring tool for determining the critical dimension (CD) of patterned structures. A simple 1D patterned c-Si periodic structure was measured from the zeroth-order diffraction response at a fixed angle of incidence, whose result agreed with the theoretical prediction made by using a rigorous coupled-wave analysis (RCWA) calculation for the reflected light. To investigate the SE’s advantage over atomic force microscopy we also prepared a c-Si periodic structure with a Cr hat on the top. We observed that the theoretical result could also explain the measured spectra quantitatively even when the metallic hat structure on the top acted as a strong obstacle to the probing light.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
