Analysis on the Grating Structure of Si by Using Spectroscopic Ellipsometry

Abstract

Analysis on the Grating Structure of Si by Using Spectroscopic Ellipsometry S.-H. Han, T. H. Ghong, J. S. Byun and Y. D. Kim Nano Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 Y. Y. Yu and K. C. Park Department of Information Display, Kyung Hee University, Seoul 130-701 (Received 21 October 2007) Spectroscopic ellipsometry (SE) has come to be an important method to determine the critical dimension (CD) of patterned structures by measuring the zeroth-order di raction response at a xed angle of incidence. To investigate the possibility of an in-situ monitoring tool for a complicated multilayer, we performed SE measurements on a one-dimensional patterned c-Si periodic structure with SiO2 hat on Si substrate. Rigorous coupled-wave analysis (RCWA) calculation for the re ected light could explain the measured spectrum quantitatively even when the hat structure on the top acted as a strong obstacle to the probing light. PACS numbers: 78.20.Ci, 78.40.-q, 42.25.Bs