Abstract
Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. The electrosynthesized films were characterized by UV-Visible, FT-Raman, and FTIR spectroscopies. The optical transmissions of the as-deposited films were measured in the 400–900 nm wavelength range. These measurements showed that the optical band gap of the polymer films is in the order of 2.52 eV. The FT-Raman and FTIR measurements showed that the POT film is composed of imine and amine units. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The nonlinear current-voltage characteristics of these devices indicate a rectifying behavior. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The measured C-V and C-F characteristics are presented.
Highlights
Π-conjugated polymers have received a great deal of attention due to their potential technological applications
A three-electrode cell assembly was used during the electrochemical polymerization employing indium tin oxide (ITO)-coated glass substrate as working electrode, a platinum foil as a counter electrode, and a saturated calomel electrode (SCE) as a reference electrode
Two reduction couples are present in the cyclic voltammograms (CVs) at –0.02 and 0.28 V/SCE
Summary
Π-conjugated polymers have received a great deal of attention due to their potential technological applications These materials have been considered as active electrode materials in energy storage [1], optoelectronic devices [2], and display devices [3]. Nafdey and other authors [11,12,13,14] studied Schottky barriertype devices of doped PANI with various dopants (HCl, I2, FeCl3, formic acid, etc.) They estimated various electronic parameters such as the ideality factor, the barrier height, the work function, the Richardson constant, and the saturation current density from current-voltage (I-V) and capacitance-voltage (C-V) measurements that were carried out on metal/polyaniline junctions. No studies have been performed on metal/POT junctions
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