Abstract

Poly(aniline-co-o-toluidine) (PANI-co-POT) thin films were deposited on indium tin oxide- (ITO-) coated glass substrates by electrochemical polymerization under cyclic voltammetric conditions from aniline-co-o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. These measurements showed that the optical band gap of the copolymer films is on the order of 2.65 eV. On the other hand, ITO/PANI-co-POT/Al devices were fabricated by thermal evaporation of Aluminum circular electrodes on the as-deposited PANI-co-POT films. The Current-Voltage characteristics of these devices are nonlinear. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The C-F characteristics were also measured.

Highlights

  • Considerable attention was given to the fabrication and characterization of thin films and Schottky diodes using conducting polymers as active materials

  • In our series of papers [14,15,16,17], we have studied the electrical properties of Schottky diodes based on polyaniline, as well as polythiophene and its derivatives

  • ITO/PANI-co-POT/Al sandwich devices were fabricated based on these films

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Summary

Introduction

Considerable attention was given to the fabrication and characterization of thin films and Schottky diodes using conducting polymers as active materials. Conducting polymers consisting of a π-conjugated backbone are attractive because of their unique electronic properties. The common uses of polyaniline are restricted, due to its poor processability and low solubility. Various techniques, such as the modification of the monomer structure, the utilization of soluble precursor, and the preparation of copolymers and composites, have been introduced to enhance the processability and solubility. The copolymerization has the advantage as the material obtained is homogenous and the preparation methods are easy

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