Abstract
We report the ellipsometric and photoluminescence (PL) properties of Indium zinc oxide (IZO) films, which were grown by radio frequency sputtering under Ar and O2 atmospheres. IZO films grown under an O2 atmosphere (IZO (O2)) showed enhanced PL properties when compared to the films grown under an Ar atmosphere (IZO (Ar)), particularly with respect to the band-edge emission. The enhancement of band-edge emission can be attributed to the reduction in the non-emissive defect states related to oxygen vacancies, which were repaired by sputtering under O2 atmosphere, whereas the PL enhancement in green region is probably due to the formation of the different types of defects under the excess oxygen environment. This was also supported by the results of time-resolved PL measurements, where the band-edge emission of IZO (Ar) showed rapid decay with a 50 ps lifetime, which indicates the dominance of the relaxation pathway to underlying defect states. In contrast, the PL decay profiles of IZO (O2) for band-edge and emissive defect states showed moderate decay with time-constants of 2.3 ns and 5.7 ns, respectively. The exciton relaxation dynamics were sensitive to the presence and its kinds of defect states, which were controlled by the growth conditions.
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