Abstract
An emission spectrographic method for the estimation of Ga, In and Tl in semiconductor grade selenium at less than a ppm concentration has been developed. The impurities were separated from 1 g of selenium by volatilizing it from its solution in nitric acid and sulphuric acid. The residue containing the impurities was dissolved in small amounts of 6 M HCl and was loaded along with the washings on 10 mg mixture containing graphite (90%) and sodium chloride carrier (10%) in the electrode crater. The spectra were excited in a d.c. arc carrying 13 A current. The detection limits lie in the range of 0.0025–0.005 ppm. The precision of the method ranges from 7–12% for these elements. The recoveries of impurities from selenium were confirmed using radioactive tracers.
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