Abstract

The photoresponsivity spectra of double-barrier resonant tunneling diodes have been measured in a wide range of light wavelength as well as applied voltage. The complex behavior of measured spectra is analyzed taking into account different channels for electron injection into the quantum well (QW). It has been shown that the photoresponse in the infrared wavelength range could arise not only from the electrons excited inside the QW, but also from the two-dimensional electrons confined on the quantum level in the spacer accumulation layer.

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