Abstract
In this paper, spectral responses of Te-doped a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) thin films for a solid state image sensor have been reported. Te concentrations of Te-doped layer in a-Se HARP thin film were 15 wt.% and 26 wt.%, and thicknesses of Te-doped layer were 60 nm, 90 nm, and 120 nm. Spectral responses of Te-doped a-Se HARP films were investigated at bias voltages of 40 V and 60 V. Relative sensitivity and quantum efficiency of a-Se HARP films at 60 V were found to be improved by the increase of Te-doped layer thickness. This improvement is explained by the increased photogeneration efficiency at long wavelength region by the increase of Te-doped layer thickness and avalanche multiplication of the photogenerated carriers at a high electric field.
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