Abstract
The results of studying the spectral dependences of the optical absorption coefficient of CuIn1 – xGaxSe2 films obtained by the two-stage selenization of CuIn0.95Ga0.5 intermetallic layers are presented. A correlation is found between the technological conditions for the preparation of CuIn1 – xGaxSe2 films and their absorption characteristics. Based on a comparison of the obtained results with the data of powder X-ray diffraction analysis, it is concluded that the observed increase in the absorption coefficient and its shift to the short-wavelength region with increasing selenization temperature and layer thickness are due to phase and structural changes in CuIn1 – xGaxSe2 films.
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