Abstract
Spectral absorption characteristics in InGaAsP/InP double heterostructure epitaxial crystal layers have been investigated by using stimulated Raman scattering light from silica fiber excited with neodymium:yttrium aluminum garnet laser and by examining the transmitted guided light. The method proved useful in measuring wavelength-dependent optical absorption ranging between 0.1 and 20 cm−1 in epitaxial layers with waveguiding structures as well as characterizing loss in optical waveguides in the wavelength region between 1.06 and 1.7 μm.
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