Abstract
Self assembled InAs quantum dots embedded in an InGaAs quantum well were grown by molecular beam epitaxy. At room temperature these dots in a well (DWELLS) have an emission wavelength of 1.3�μm. Small mesas with lateral sizes down to 200 × 200 nm2 were fabricated by electron beam lithography and etching techniques. By photoluminescence spectroscopy at low temperatures we observe narrow lines, which we attribute to excitons and excitonic molecules. Biexciton binding energies ranging between 3.5–5�meV are found.
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