Abstract
Results of indium phosphide structures research, showing the possibility of using it in the near inferred range (NIR) photocathodes of InP / InGaAs, are represented. An optimal method of obtaining the atomically clean indium phosphide surface was suggested. The activation process of indium phosphide was shown and its spectral characteristics were given. Researches of the photoemission dependence of the structure with surface grid electrode upon different bias voltages were carried out.
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