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Abstract
Abstract The results of studying the angular and spectral characteristics of X-rays produced by passage of 10 GeV electrons through sufficiently thick Si (0.8 and 3.0 mm) and Ge (0.5 mm) single crystals at small angles to the 〈111〉 crystallographic axis are presented. Information have been obtained on the excess of the spectralangular characteristics of radiation in the crystal over respective values for an amorphous target.
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