Abstract
A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge was obtained on 1 mm × 1 mm square structure and single crystal Ge was obtained on 5 μm wide Ge wires by the RMG method with Co-induced poly-Ge as the crystal seed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
