Abstract
Cobalt oxide (CoOx) films are deposited on SiO2/Si substrates using atomic layer deposition (ALD). The physical properties of CoOx films are characterized by atomic force microscopy (AFM), spectroscopic ellipsometry and X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The O content in the CoOx films deposited at different temperatures are analyzed by XPS, which reveals that the deposited CoOx film is a mixture of CoO and Co3O4. With increasing temperature, surface chemisorbed oxygen species are substantially decreased. The ratio of Co3O4 gradually decreases compared to that of CoO with increasing temperature. Our experimental results reveal that ALD can precisely deposit CoOx film; these materials can potentially be used in the fields of physics, chemistry, materials, green environments and clean energy.
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