Abstract
A spectral analysis of Deep Level Transient Spectroscopy (SADLTS) is proposed. This method analyzes the transient junction capacitance C(t)=\\intbaS(λ)exp (-λ·t)dλ in order to determine the finite continuous emission rate spectrum S(λ). SADLTS permits one to obtain more detailed information with a single-temperature scan and spectral analysis instead of the conventional multi-temperature scan or single-exponential analysis. Even if S(λ) includes two peaks at λ1 and λ2, those peaks can be distinguished for λ2/λ1>2. As an example of the application of SADLTS, deep levels in Si:Au were experimentally investigated. According to the three-dimensional S(λ)-T2/λ-1/T representation, the apparent single peak in the conventional DLTS was found toconsist of two adjacent levels with activation energies and capture cross sections of EB1=0.51 eV, σB1=4.0×10-15 cm2 and EB2=0.47 eV, σB2=1.1×10-15 cm2, respectively.
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