Specific features of the dislocation structure of germanium in the system germanium–pyrolitic silica film

Abstract

The dislocation structure of germanium covered by a SiO2 pyrolitic film has been studied by X-ray topography. The dislocations gliding in the Ge bulk are accompanied by the formation of steps on the optically smooth interface GeSiO2. Dislocations and steps are shown to be connected with a bending of the GeSiO2 system which is due to the densification of the film during its synthesis. In the germanium bulk a neutral surface N arises with dislocations accumulated near this surface. The interaction of dislocations with equal sign results in their symmetric distribution respective to N, if they lie in the same slip plane, while those ones lying in the intersecting slip planes interact with the formation of L-type prismatic dislocations. A study of dislocation interaction near N gives estimates of the structural stresses in the film and in germanium. [Russian Text Ignored].