Abstract
The mechanisms of photo- and thermoluminescence processes in cation-deficient submicron AlN crystals after UV excitation are studied. The observed emission spectra represent a superposition of bands peaking at 3.0 and 2.5 eV. These spectral features are related to electronic transitions with participation of ON impurity centers and oxygen–vacancy centers of the VAl–ON type. According to a quantitative analysis within the general-order kinetics formalism, charge carrier trapping centers based on nitrogen vacancies VN have an activation energy of 0.45 eV and are responsible for the formation of a thermally activated peak at a temperature of 345 K.
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