Abstract
Temperature dependences of the Hall coefficient and resistivity of the InxGa1 − x N alloys (0 ≤ x ≤ 1) are investigated. It is found that, at x ≤ 0.4, the temperature dependences of the Hall coefficient and resistivity have the activation-related portion. The activation energy depends linearly on the In content in the alloy. At x ≈0.5, the activation portion vanishes. The main scattering mechanism depends on the temperature, on the defect density in the film (this density is largely determined by the used intermediate GaN layers), and on the alloy composition x.
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