Abstract
Analytical expressions for the normalized intensities of bands in the spectra of low-temperature (T=1.8–4.2 K) luminescence, related to the recombination of free electrons at shallow-level acceptors, to the recombination of free holes at shallow-level donors and to the electronic transitions between the components of donor-acceptor pairs and of bound excitons are reported. Different possibilities of using these expressions for determination of the changes in the concentrations of shallow-level acceptors and donors, caused by external factors F, are analyzed. A comparison of the theoretical dependences of the normalized intensities of low-temperature impurity-, donor-acceptor-, and exciton-luminescence bands on F with the relevant dependences used in experiments is performed.
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