Abstract
The range of applicability of the method for the determination of the shallow-level donor and acceptor content in semiconductors from the ratio of low-temperature (T=1.8–4.2 K) intensities of exciton-luminescence bands was analyzed; these bands are caused, in particular, by the radiative annihilation of excitons bound to impurities and free excitons. It is shown that the correct data on the concentrations of shallow-level acceptors and donors and on changes in these concentrations under various effects can be obtained if the occupancy of the defects under consideration by electrons and holes is independent of the luminescence excitation intensity and external factors. The procedures for verifying the fulfillment of conditions for applicability of the method are outlined. An example of using the method for determination of thermally stimulated changes in concentrations of shallow-level acceptors and donors in gallium arsenide is given.
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